High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm equivalent oxide thickness
نویسندگان
چکیده
منابع مشابه
Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress
The dielectric breakdown property of ultrathin 2.5 and 5.0 nm hafnium oxide (HfO2) gate dielectric layers with metal nitride (TaN) gate electrodes for metal oxide semiconductor (MOS) structure has been investigated. Reliability studies were performed with constant voltage stressing to verify the processing condition effects (film thicknesses and post metal annealing temperatures) on times to br...
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